Preparation and Characterization of Boron Carbide Nitrogen Thin Films

被引：0
|
作者：
Liu Zhenliang [1 ]
Liao Zhijun [1 ]
Fan Qiang [1 ]
Yang Shuichang [1 ]
Wu Dengxue [1 ]
Lu Tiecheng [1 ,2 ]
机构：
[1] Sichuan Univ, Key Lab Radiat Phys & Technol, Minist Educ, Chengdu 610064, Peoples R China
[2] Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110015, Peoples R China
来源：
RARE METAL MATERIALS AND ENGINEERING | 2009年 / 38卷
关键词：
boron carbon nitride thin films; X-ray diffraction (XRD); X-ray photon electron spectroscopy (XPS); fourier-transformed infrared spectroscopy (FTIR); NITRIDE; DIAMOND;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, Boron carbon nitride thin films were deposited on Si (100) substrates using electron beam evaporation technology. The thickness was ascertained by Ellipsometer; meantime the films samples were characterized by X-ray diffraction(XRD) Fourier-transformed infrared spectroscopy and X-ray photon electron spectroscopy(XPS). The result of Ellipsometer shows that the films are even and the deposition rate is slow. The results of X-ray diffraction show the film are crystal state. At the same time the results of X-ray photon electron spectroscopy (XPS) and Fourier-transformed infrared spectroscopy show the films are atomic-level hybrids composed of B, C and N atoms.
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页码：568 / 571
页数：4
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