Electrical properties of copper films produced by MOCVD

被引：37

作者：

Riedel, S

Rober, J

Gessner, T

机构：

来源：

MICROELECTRONIC ENGINEERING | 1997年 / 33卷 / 1-4期

关键词：

copper; resistivity; film structure; impurities;

D O I：

10.1016/S0167-9317(96)00042-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To characterize blanket CVD copper films several analytical tests were carried out. The impurity concentrations were detected by secondary ion mass spectroscopy. Values lower than 0.2 at.% were found. Furthermore some structural properties like grain sizes were investigated using transmission electron microscopy. The grain sizes were determined by TEM dark field images. The model by Mayadas and Shatzkes [1] will be discussed for the explanation of the higher resistivity of CVD deposited copper films compared to the bulk value. It was found that the grain boundaries mainly contribute to this increased resistivity.

引用

页码：165 / 172

页数：8

共 12 条

[1]

ARTUNC N, 1993, J PHYS CONDENS MATT, P559

[2]

FISK Z, 1981, TREATISE MAT SCI TEC, V21

[3]

Huang Y. K., 1993, Nanostructured Materials, V2, P505, DOI 10.1016/0965-9773(93)90168-B

[4] ELECTRICAL-RESISTIVITY OF COPPER AND NICKEL THIN-FILM INTERCONNECTIONS [J].