Optimization of near-infrared laser drilling of silicon carbide under water

被引：76
作者：
Iwatani, Naoki [1 ]
Hong Duc Doan [1 ]
Fushinobu, Kazuyoshi [1 ]
机构：
[1] Tokyo Inst Technol, Tokyo 1528550, Japan
来源：
INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER | 2014年 / 71卷
关键词：
Liquid-assisted laser processing; Silicon carbide; Crack; Debris; Heat affect zone; Surface quality; ABLATION; HOLES; FILM;
D O I：
10.1016/j.ijheatmasstransfer.2013.12.046
中图分类号：
O414.1 [热力学];
学科分类号：
摘要：
Laser drilling of silicon carbide (SiC) wafer in air (dry ablation) and underwater by using ns pulsed infrared (1064 nm) Nd:YAG laser is investigated. In order to suggest optimal parameters of via processing in SiC wafer, the effects of pulse number, laser fluence, water film thickness, and focus position are evaluated. As compared with dry ablation vias, decreasing etching rate, increasing via diameter, and generation of cracks in high-energy regime are observed in liquid-assisted processing. However, it is found that it can create vias without debris, HAZ, cracks. Also, optimal parameter set for infrared pulse laser processing under water is found to be the laser fluence of less than 10 J/cm(2) and water thickness of 1 mm. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码：515 / 520
页数：6
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