Exciton/plasmon polaritons in GaAs/Al0.93Ga0.07As heterostructures near a metallic layer

被引：30

作者：

Bellessa, J. ^{[1
]}

Symonds, C. ^{[2
,3
]}

Meynaud, C. ^{[2
,3
]}

Plenet, J. C. ^{[2
,3
]}

Cambril, E. ^{[4
]}

Miard, A. ^{[4
]}

Ferlazzo, L. ^{[4
]}

Lemaitre, A. ^{[4
]}

机构：

[1] Univ Montpellier 2, Etud Semicond Grp, CNRS, F-34095 Montpellier 5, France

[2] Univ Lyon 1, Lab PMCN, F-69622 Villeurbanne, France

[3] Univ Lyon, CNRS, UMR 5586, F-69622 Montpellier, France

[4] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France

来源：

PHYSICAL REVIEW B | 2008年 / 78卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.78.205326

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the strong coupling between inorganic quantum well excitons and surface plasmons. For that purpose a corrugated silver film was deposited on the top of a heterostructure consisting of GaAs/GaAlAs quantum wells. The formation of plasmon/heavy-hole exciton/light-hole exciton mixed states is demonstrated with reflectometry experiments. The interaction energies amount to 21 meV for the plasmon/light-hole exciton and 22 meV for the plasmon/heavy-hole exciton. Some particularities of the plasmon-exciton coupling were also discussed and qualitatively related to the plasmon polarization.

引用

页数：4

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