Temperature dependence of the hyperfine fields of 111In in sapphire (Al2O3) single crystals

被引:1
|
作者
Steffens, Michael [1 ]
Penner, Jakob [1 ]
Kamleh, Hassan [2 ]
Vianden, Reiner [1 ]
机构
[1] Univ Bonn, Helmholtz Inst Strahlen & Kernphys, D-53115 Bonn, Germany
[2] Univ Damascus, Dept Phys, Fac Sci, Damascus, Syria
来源
HYPERFINE INTERACTIONS | 2010年 / 197卷 / 1-3期
关键词
Perturbed angular correlation; Electron capture; Electron mobility; EC after effect; Ion implantation;
D O I
10.1007/s10751-010-0190-7
中图分类号
O64 [物理化学(理论化学)、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号
070203 ; 070304 ; 081704 ; 1406 ;
摘要
The decay of In-111 to Cd-111 via electron capture, accompanied by Auger electrons, leaves the outermost atomic shells of the cadmium in a highly ionized state. The recovery of the electron shells depends strongly on the electronic environment of the probe nucleus. In order to study this effect, sapphire single crystals were ion implanted with In-111 at the Bonner Isotopenseparator. After annealing, the samples were measured at temperatures up to 900 K. To study the recombination characteristics and the influence of acceptor and donor levels, the samples were additionally doped with various concentrations of Si, Cr, Mg or P.
引用
收藏
页码:167 / 171
页数:5
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