Grain structure analysis and effect on electromigration reliability in nanoscale Cu interconnects

被引：28

作者：

Cao, Linjun ^{[1
,2
]}

Ganesh, K. J. ^{[2
]}

Zhang, Lijuan ^{[1
]}

Aubel, Oliver ^{[3
]}

Hennesthal, Christian ^{[3
]}

Hauschildt, Meike ^{[3
]}

Ferreira, Paulo J. ^{[2
]}

Ho, Paul S. ^{[1
,2
]}

机构：

[1] Univ Texas Austin, Microelect Res Ctr, Lab Interconnect & Packaging, Austin, TX 78712 USA

[2] Univ Texas Austin, Mat Sci & Engn Program, Austin, TX 78712 USA

[3] GLOBALFOUNDRIES Dresden Module One LLC & Co KG, D-01109 Dresden, Germany

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 13期

关键词：

D O I：

10.1063/1.4799484

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The grain structure in Cu interconnects of the 45 nm node was analyzed to yield grain orientation and boundary characteristics using a high-resolution electron diffraction technique. A dominant sidewall growth of {111} grains was observed, reflecting the importance of interfacial energy in controlling grain growth below 70 nm linewidth. The grain structure was used to identify flux divergent sites for void formation under electromigration (EM) and to analyze the effect on EM statistics for Cu lines with CoWP capping using a microstructure-based model. This analysis established a correlation between the microstructure of Cu nanolines, void formation kinetics, and EM statistics. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4799484]

引用

页数：4

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