Enhancement in Light Extraction of GaN-Based Light-Emitting Diodes With High Reflectivity Electrodes

被引：5
|
作者：
Su, Yan-Kuin [1 ,2 ]
Chen, Kuan Chun [1 ,2 ]
Lin, Chun-Liang [3 ]
Hsu, Hsiao-Chiu [1 ,2 ]
机构：
[1] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 701, MG, Taiwan
[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 701, MG, Taiwan
[3] Kun Shan Univ, Dept Elect Engn, Tainan 710, Gunma, Taiwan
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2011年 / 23卷 / 23期
关键词：
GaN-based light-emitting diodes (LEDs); high reflectivity electrodes; light absorption; INGAN-GAN; BLUE;
D O I：
10.1109/LPT.2011.2167605
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In GaN-based light-emitting diodes (LEDs), using gold-based metals to serve as electrodes, light absorption is a problem that severely restricts the light extraction in LEDs. This study demonstrates the GaN-based LEDs with high reflectivity metals (Ag/Pt) onto an n-type GaN surface and transparent contact layer (indium-tin-oxide), to serve as the n-type electrode and the p-type electrode, respectively. By replacing Cr/Au with Ag/Pt to serve as electrodes of LEDs, the light output power of the LEDs was increased by 15.7%, thereby significantly reducing the manufacturing cost of LEDs.
引用
收藏
页码：1793 / 1795
页数：3
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