Microwave-assisted hydrothermally grown epitaxial ZnO films on <1 1 1> MgAl2O4 substrate

被引：8
作者：
Liew, Laura-Lynn [1 ,2 ]
Le, Hong Quang [1 ]
Goh, Gregory K. L. [1 ,2 ]
机构：
[1] ASTAR, Inst Mat Res & Engn, Singapore 117602, Singapore
[2] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
来源：
JOURNAL OF SOLID STATE CHEMISTRY | 2012年 / 189卷
关键词：
Microwave-assisted hydrothermal growth; Zinc oxide; Electrical properties; TEMPERATURE AQUEOUS SYNTHESIS; THIN-FILMS; GAN;
D O I：
10.1016/j.jssc.2011.11.021
中图分类号：
O61 [无机化学];
学科分类号：
070301 ; 081704 ;
摘要：
In this report, epitaxial ZnO films were grown on <1 1 1> MgAl2O4 single crystal substrates using Microwave Assisted Hydrothermal (MAH) method with microwave radiation heating (2.45 GHz) at 90 degrees C in a short time (within 15 min). Scanning electron microscopy confirms that these films possess smooth surface morphology with fully coalesced grains. In addition, photoluminescence (PL) measurements exhibit strong ultraviolet emission at room temperature, indicating potential applications for short-wave light-emitting photonic devices. The PL properties were improved by a thermal annealing process without generating structural defects. Hall measurements after thermal treatment show the carrier concentration to be of the order of 10(19) cm(-3) which is comparable to those grown by conventional solution methods. The MAH method will offer a rapid route to synthesize epitaxial ZnO films with good optical and electrical properties for various applications. (C) 2011 Elsevier Inc. All rights reserved.
引用
收藏
页码：90 / 95
页数：6
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