Study on 1.8 μm emission of Tm3+ doped GeS2-Ga2S3-CsCl glasses

被引：7
作者：
Zhang, Zhihuan [1 ]
Ren, Jing [1 ]
Yan, Qiqi [1 ]
Chen, Guorong [1 ]
机构：
[1] E China Univ Sci & Technol, Sch Mat Sci & Engn, Key Lab Ultrafine Mat, Minist Educ, Shanghai 200237, Peoples R China
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 2014年 / 383卷
基金：
中国国家自然科学基金;
关键词：
Spectra properties; Rare earth; Chalcohalide glass; 1800; nm; INFRARED-EMISSION; LASER; DEPENDENCE; EFFICIENT;
D O I：
10.1016/j.jnoncrysol.2013.05.021
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Tm3+ doped GeS2-Ga2S3-CsCI (GGC) chalcohalide glasses are prepared by melt-quenching method. The 1.8 mu m emission of Tm3+ is investigated under the excitation of 808 nm laser diode. The ratio of the 1.8 mu m emission intensity to that of the 1.48 mu m (I-1.8/I-1.48) reaches 10.7, it is much higher than previously reported Tm3+ doped oxide glasses. With the optimized doping concentration, the 1.8 mu m emission in a range of 1756 to 1876 nm shows the largest full-width-at-half-maximum (FWHM) of similar to 120 nm. The life time of Tm3+ reaches millisecond level for the present chalcohalide glasses. It is at the same level as oxide glass counterparts. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：209 / 211
页数：3
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