Study on 1.8 μm emission of Tm3+ doped GeS2-Ga2S3-CsCl glasses

被引：7

作者：

Zhang, Zhihuan ^{[1
]}

Ren, Jing ^{[1
]}

Yan, Qiqi ^{[1
]}

Chen, Guorong ^{[1
]}

机构：

[1] E China Univ Sci & Technol, Sch Mat Sci & Engn, Key Lab Ultrafine Mat, Minist Educ, Shanghai 200237, Peoples R China

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2014年 / 383卷

基金：

中国国家自然科学基金;

关键词：

Spectra properties; Rare earth; Chalcohalide glass; 1800; nm; INFRARED-EMISSION; LASER; DEPENDENCE; EFFICIENT;

D O I：

10.1016/j.jnoncrysol.2013.05.021

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Tm3+ doped GeS2-Ga2S3-CsCI (GGC) chalcohalide glasses are prepared by melt-quenching method. The 1.8 mu m emission of Tm3+ is investigated under the excitation of 808 nm laser diode. The ratio of the 1.8 mu m emission intensity to that of the 1.48 mu m (I-1.8/I-1.48) reaches 10.7, it is much higher than previously reported Tm3+ doped oxide glasses. With the optimized doping concentration, the 1.8 mu m emission in a range of 1756 to 1876 nm shows the largest full-width-at-half-maximum (FWHM) of similar to 120 nm. The life time of Tm3+ reaches millisecond level for the present chalcohalide glasses. It is at the same level as oxide glass counterparts. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：209 / 211

页数：3

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