Room-temperature ferromagnetism in Er-doped ZnO thin films

被引：60

作者：

Qi, Jing ^{[1
]}

Yang, Yinghu ^{[1
]}

Zhang, Li ^{[1
]}

Chi, Junhong ^{[1
]}

Gao, Daqiang ^{[1
]}

Xue, Desheng ^{[1
]}

机构：

[1] Lanzhou Univ, Key Lab Magnetism & Magnet Mat MOE, Lanzhou 730000, Peoples R China

来源：

SCRIPTA MATERIALIA | 2009年 / 60卷 / 05期

关键词：

Compound semiconductors; Magnetic thin films; Raman spectroscopy; X-ray photoelectron spectroscopy (XPS); DILUTED MAGNETIC SEMICONDUCTORS; OXIDES;

D O I：

10.1016/j.scriptamat.2008.10.015

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Zn(1-x)Ei(x)O thin filnis have been fabricated on glass substrates by radiofrequency reactive magnetron sputtering. All the films were ferromagnetic at room temperature except for x = 0 and the estimated magnetic moment per Er ion decreased with increasing Er concentration. The presence of any secondary phase was ruled out based on X-ray diffraction and X-ray photoelectron spectroscopy. The ferromagnetism was attributed to the substitution of Er ions for Zn(21) in ZnO lattices, and could be interpreted by the bound-magnetic-polaron model. (C) 2008 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：289 / 292

页数：4

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