Comparison of properties of Pt/PZT/Pt and Ru/PZT/Pt ferroelectric capacitors

被引：0
|
作者：
Jia, Z [1 ]
Ren, TL [1 ]
Liu, TZ [1 ]
Hu, H [1 ]
Zhang, ZG [1 ]
Xie, D [1 ]
Liu, LT [1 ]
机构：
[1] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2006年 / 23卷 / 04期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Pb(Zr0.4Ti0.6)O-3 film prepared by sol-gel spin coating on a Pt/Ti/SiO2/Si substrate is applied to ferroelectric capacitors with Pt or Ru as the top electrode. For the Pt/PZT/Pt and Ru/PZT/Pt ferroelectric capacitors, although with the same ferroelectric him, different top electrode materials incur different properties of PZT capacitors, such as fatigue, leakage, remanent and saturated polarization, except the similar crystal orientations of the PZT film. After 10(10) switch cycles, the remanent polarizations of the Ru/PZT/Pt and Pt/PZT/Pt capacitors decrease to 70% and 84%, respectively. The leakage current density of the latter increases obviously at positive bias after 10(8) switch cycles, compared with the former. Different materials for the top electrode bring different conditions at the PZT/top electrode interface. The influence of oxygen-vacancy concentration at the PZT/electrode interface and the influence of oxides of the electrode material at the PZT/electrode interface to charge injection can explain the difference of properties of the PZT capacitors with Pt or Ru as the top electrodes.
引用
收藏
页码：1042 / 1045
页数：4
相关论文
共 50 条
  • [1] Comparison of properties of Pt/PZT/Pt and Ru/PZT/Pt ferroelectric capacitors
    Institute of Microelectronics, Tsinghua University, Beijing 100084, China
    Chin. Phys. Lett., 2006, 4 (1042-1045):
  • [2] Degradation of Ferroelectric Properties of Pt/PZT/Pt Capacitors in Hydrogen-containing Environment
    Kim, Dong-Chun
    Lee, Won-Jong
    TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS, 2005, 6 (05) : 214 - 220
  • [3] Effects of plasma etching damage on the Pt/PZT/Pt ferroelectric capacitors
    Oh, S
    Park, HB
    Joo, SH
    Oh, SJ
    Yoo, MH
    Kim, BH
    Lee, JH
    Yoo, CY
    Lee, SI
    Lee, MY
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1998, 32 : S1649 - S1651
  • [4] Evaluation of Pt/PZT/Pt capacitors using SIMS
    Tomotani, M
    Goto, Y
    Ashida, H
    Otani, S
    ISTFA '98: PROCEEDINGS OF THE 24TH INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS, 1998, : 185 - 193
  • [5] Total dose radiation effects of Pt/PZT/Pt ferroelectric capacitors fabricated by PLD method
    Gao, JX
    Zheng, LR
    Huang, BP
    Song, ZT
    Yang, LX
    Fan, YJ
    Zhu, DZ
    Lin, CL
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (09) : 836 - 839
  • [6] The domain structure and polarization retention properties of PT/PZT/PT ferroelectric thin film
    WANG LongHai1
    2 Department of Electronic Science and Technology
    3 The Research & Test Center of Materials
    Science in China(Series E:Technological Sciences), 2007, (02) : 190 - 198
  • [7] The domain structure and polarization retention properties of PT/PZT/PT ferroelectric thin film
    LongHai Wang
    Jun Yu
    SuLing Zhao
    ChaoDuan Zheng
    YunBo Wang
    JunXiong Gao
    Science in China Series E: Technological Sciences, 2007, 50 : 190 - 198
  • [8] The domain structure and polarization retention properties of PT/PZT/PT ferroelectric thin film
    Wang, LongHai
    Yu, Jun
    Zhao, SuLing
    Zheng, ChaoDuan
    Wang, YunBo
    Gao, JunXiong
    SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 2007, 50 (02): : 190 - 198
  • [9] Reactive ion etching of Pt/PZT/Pt ferroelectric thin film capacitors in high density DECR plasma
    Mace, H
    Achard, H
    Peccoud, L
    MICROELECTRONIC ENGINEERING, 1995, 29 (1-4) : 45 - 48
  • [10] Reactive ion etching of Pt/PZT/Pt ferroelectric thin film capacitors in high density DECR plasma
    LETI , Grenoble, France
    Microelectron Eng, 1-4 (45-48):
12345