Criterion of intrinsic charge bistability appearance in double-barrier resonant-tunneling structures

被引：0
|
作者：
Baranov, AV [1 ]
Dragunov, VP [1 ]
机构：
[1] Novosibirsk State Tech Univ, Dept Phys, Novosibirsk 630092, Russia
来源：
APEIE-98: 1998 4TH INTERNATIONAL CONFERENCE ON ACTUAL PROBLEMS OF ELECTRONIC INSTRUMENT ENGINEERING PROCEEDINGS, VOL 1 | 1998年
关键词：
D O I：
10.1109/APEIE.1998.768895
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The model of intrinsic charge bistability in double-barrier resonant-tunneling structure was modified taking into account lan approximate energy dependence of the barrier transmission coefficient and a form of the charge distribution in the quantum well. Criterion of bistability appearance in symmetric structures was obtained and extended to structures with many-valley electron tunneling transport.
引用
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页码：20 / 21
页数：2
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