Ablation induced by femtosecond laser in sapphire

被引：32
|
作者：
Li, XX [1 ]
Jia, TQ [1 ]
Feng, DH [1 ]
Xu, ZZ [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Lab High Intens Opt, Shanghai 201800, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2004年 / 225卷 / 1-4期
基金：
上海市自然科学基金; 中国国家自然科学基金;
关键词：
ablation; femtosecond laser; sapphire;
D O I：
10.1016/j.apsusc.2003.10.044
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Based on the linearity of ablated area and laser pulse energy, the threshold fluence of sapphire is determined accurately in this paper. Meanwhile the dependences of F-th on pulse duration (tau < 1 ps) with laser at 400 and 800 nm are presented, respectively. It is found that the experiment results agree well with the theoretical calculations based on avalanche model. And we discuss the photon absorption mechanism of the conduction band electrons in Al2O3 single crystal. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：339 / 346
页数：8
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