Ablation induced by femtosecond laser in sapphire

被引：32
作者：
Li, XX [1 ]
Jia, TQ [1 ]
Feng, DH [1 ]
Xu, ZZ [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Lab High Intens Opt, Shanghai 201800, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2004年 / 225卷 / 1-4期
基金：
中国国家自然科学基金; 上海市自然科学基金;
关键词：
ablation; femtosecond laser; sapphire;
D O I：
10.1016/j.apsusc.2003.10.044
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Based on the linearity of ablated area and laser pulse energy, the threshold fluence of sapphire is determined accurately in this paper. Meanwhile the dependences of F-th on pulse duration (tau < 1 ps) with laser at 400 and 800 nm are presented, respectively. It is found that the experiment results agree well with the theoretical calculations based on avalanche model. And we discuss the photon absorption mechanism of the conduction band electrons in Al2O3 single crystal. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：339 / 346
页数：8
相关论文
共 18 条
  • [1] Laser processing of sapphire with picosecond and sub-picosecond pulses
    Ashkenasi, D
    Rosenfeld, A
    Varel, H
    Wahmer, M
    Campbell, EEB
    [J]. APPLIED SURFACE SCIENCE, 1997, 120 (1-2) : 65 - 80
  • [2] Chichkov BN, 1996, APPL PHYS A-MATER, V63, P109, DOI 10.1007/BF01567637
  • [3] LASER ENERGY DEPOSITION AT SAPPHIRE SURFACES STUDIED BY PULSED PHOTOTHERMAL DEFORMATION
    DREYFUS, RW
    MCDONALD, FA
    VONGUTFELD, RJ
    [J]. APPLIED PHYSICS LETTERS, 1987, 50 (21) : 1491 - 1493
  • [4] LASER-INDUCED BREAKDOWN BY IMPACT IONIZATION IN SIO2 WITH PULSE WIDTHS FROM 7 NS TO 150 FS
    DU, D
    LIU, X
    KORN, G
    SQUIER, J
    MOUROU, G
    [J]. APPLIED PHYSICS LETTERS, 1994, 64 (23) : 3071 - 3073
  • [5] Femtosecond laser ablation of transparent dielectrics:: measurement and modelisation of crater profiles
    Guizard, S
    Semerok, A
    Gaudin, J
    Hashida, A
    Martin, P
    Quéré, F
    [J]. APPLIED SURFACE SCIENCE, 2002, 186 (1-4) : 364 - 368
  • [6] CONTRASTED BEHAVIOR OF AN ELECTRON-GAS IN MGO, AL2O3 AND SIO2
    GUIZARD, S
    MARTIN, P
    DAGUZAN, P
    PETITE, G
    AUDEBERT, P
    GEINDRE, JP
    DOSSANTOS, A
    ANTONNETTI, A
    [J]. EUROPHYSICS LETTERS, 1995, 29 (05): : 401 - 406
  • [7] Laser ablation thresholds of silicon for different pulse durations:: theory and experiment
    Jeschke, HO
    Garcia, ME
    Lenzner, M
    Bonse, J
    Krüger, J
    Kautek, W
    [J]. APPLIED SURFACE SCIENCE, 2002, 197 : 839 - 844
  • [8] Threshold of femtosecond laser-induced damage in transparent materials
    Jia, TQ
    Li, RX
    Liu, Z
    Xu, ZZ
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2002, 74 (04): : 503 - 507
  • [9] Laser ablation of dielectrics with pulse durations between 20 fs and 3 ps
    Kautek, W
    Kruger, J
    Lenzner, M
    Sartania, S
    Spielmann, C
    Krausz, F
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (21) : 3146 - 3148
  • [10] Femtosecond optical breakdown in dielectrics
    Lenzner, M
    Kruger, J
    Sartania, S
    Cheng, Z
    Spielmann, C
    Mourou, G
    Kautek, W
    Krausz, F
    [J]. PHYSICAL REVIEW LETTERS, 1998, 80 (18) : 4076 - 4079
12