Effective 3-D Device Electrothermal Simulation Analysis of Influence of Metallization Geometry on Multifinger Power HEMTs Properties

被引：17

作者：

Chvala, Ales ^{[1
]}

Marek, Juraj ^{[1
]}

Pribytny, Patrik ^{[1
]}

Satka, Alexander ^{[1
]}

Donoval, Martin ^{[2
]}

Donoval, Daniel ^{[1
]}

机构：

[1] Slovak Univ Technol Bratislava, Inst Elect & Photon, Bratislava 81219, Slovakia

[2] NanoDesign Ltd, Bratislava 81104, Slovakia

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017年 / 64卷 / 01期

关键词：

3-D electrothermal simulation; metallization layout; power multifinger high-electron mobility transistor (HEMT);

D O I：

10.1109/TED.2016.2629024

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this brief, obtained results of the electrothermal analysis of multifinger power high-electron mobility transistors (HEMTs) are presented. The analysis of thermal and electrical behavior is supported by effective 3-D electrothermal device simulation method developed Synopsys for Synopsys TCAD Sentaurus environment using mixed-mode setup. The effects of multifinger HEMT structure metallization layout design are described and studied. Simulation results depict the significant effect of metallization geometry on the electrothermal properties and behavior of the power multifinger HEMTs.

引用

页码：333 / 336

页数：4

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