Effect of AgNO3 concentration on structure of aligned silicon nanowire arrays fabricated via silver-assisted chemical etching

被引：12
|
作者：
Dao Tran Cao [1 ]
Luong Truc Quynh Ngan [1 ]
Tran Van Viet [1 ]
Cao Tuan Anh [2 ]
机构：
[1] Vietnam Acad Sci & Technol, Inst Mat Sci, Hanoi, Vietnam
[2] Vietnam Acad Sci & Technol, Inst Phys, Hanoi, Vietnam
来源：
INTERNATIONAL JOURNAL OF NANOTECHNOLOGY | 2013年 / 10卷 / 3-4期
关键词：
silicon; nanowire; optical properties; absorption; reflection; UNIFORM;
D O I：
10.1504/IJNT.2013.053147
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this paper we present a systematic study of the effect of AgNO3 concentration in HF/AgNO3 aqueous solution on the structure and properties of the aligned silicon nanowire (SiNW) arrays. The results showed that morphology and properties of aligned SiNW arrays depend strongly on AgNO3 concentration. The size of Si nanowires is uniform over large area with the diameter in the region of 100-160 nm and the length in the region of 5-12 mu m. When the AgNO3 concentration is large enough, the reflection coefficient of SiNW arrays is less than 2%.
引用
收藏
页码：343 / 350
页数：8
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