Low temperature diamond growth using fluorinated hydrocarbons

被引：22

作者：

Schmidt, I

Hentschel, F

Benndorf, C

机构：

[1] Institute of Physical Chemistry, University of Hamburg, 20146, Hamburg

来源：

关键词：

diamond growth; fluorinated hydrocarbons; diamond thin film deposits;

D O I：

10.1016/0925-9635(96)00542-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Diamond thin film deposition using gas mixtures of CH4, CHF3 and CF4, respectively, was studied using a hot-filament CVD technique. The diamond growth rate was measured in-situ with laser-interferometry and the film quality was determined using Raman spectroscopy, Compared with the conventional CH4/H-2 gas mixtures, with CHF3/H-2 the substrate temperature could be considerably decreased to 400 degrees C with still significant growth rates. Contrary to this positive behaviour of CHF3/H-2, no deposition at al had been observed for the CF4/H-2, gas mixture.

引用

页码：1318 / 1322

页数：5

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