Dissipative phases across the superconductor-to-insulator transition

被引:14
作者
Couedo, F. [1 ]
Crauste, O. [1 ]
Drillien, A. A. [1 ]
Humbert, V. [1 ]
Berge, L. [1 ]
Marrache-Kikuchi, C. A. [1 ]
Dumoulin, L. [1 ]
机构
[1] Univ Paris 11, IN2P3, CNRS, CSNSM,Univ Paris Saclay, F-91405 Orsay, France
关键词
LOCALIZATION;
D O I
10.1038/srep35834
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Competing phenomena in low dimensional systems can generate exotic electronic phases, either through symmetry breaking or a non-trivial topology. In two-dimensional (2D) systems, the interplay between superfluidity, disorder and repulsive interactions is especially fruitful in this respect although both the exact nature of the phases and the microscopic processes at play are still open questions. In particular, in 2D, once superconductivity is destroyed by disorder, an insulating ground state is expected to emerge, as a result of a direct superconductor-to-insulator quantum phase transition. In such systems, no metallic state is theoretically expected to survive to the slightest disorder. Here we map out the phase diagram of amorphous NbSi thin films as functions of disorder and film thickness, with two metallic phases in between the superconducting and insulating ones. These two dissipative states, defined by a resistance which extrapolates to a finite value in the zero temperature limit, each bear a specific dependence on disorder. We argue that they originate from an inhomogeneous destruction of superconductivity, even if the system is morphologically homogeneous. Our results suggest that superconducting fluctuations can favor metallic states that would not otherwise exist.
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页数:6
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