Superlattice-like electrode for low-power phase-change random access memory

被引：17

作者：

Lu, Yegang ^{[1
,2
]}

Song, Sannian ^{[1
]}

Song, Zhitang ^{[1
]}

Wu, Liangcai ^{[1
]}

He, Aodong ^{[1
,2
]}

Gong, Yuefeng ^{[1
]}

Rao, Feng ^{[1
]}

Liu, Bo ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 11期

基金：

中国国家自然科学基金;

关键词：

25;

D O I：

10.1063/1.4751258

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Superlattice-like top electrode formed alternately by TiN and W was embedded into phase-change random access memory (PCRAM) with the aim of reducing the power. Ga2Sb4Te3 film is employed as phase change layer. The minimum reset voltage of PCRAM based on superlattice-like electrode was significantly lower than that of one based on the conventional electrode. The set operation can be completed by an electric pulse as short as 5 ns. The superlattice-like-electrode-based PCRAM can be normally operated at 120 degrees C with endurance up to 1 x 10(6) cycles. The low thermal conductivity of superlattice-like electrode is responsible for the performance improvement of PCRAM. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4751258]

引用

页数：4

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