Superlattice-like electrode for low-power phase-change random access memory

被引：17
|
作者：
Lu, Yegang [1 ,2 ]
Song, Sannian [1 ]
Song, Zhitang [1 ]
Wu, Liangcai [1 ]
He, Aodong [1 ,2 ]
Gong, Yuefeng [1 ]
Rao, Feng [1 ]
Liu, Bo [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 11期
基金：
中国国家自然科学基金;
关键词：
25;
D O I：
10.1063/1.4751258
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Superlattice-like top electrode formed alternately by TiN and W was embedded into phase-change random access memory (PCRAM) with the aim of reducing the power. Ga2Sb4Te3 film is employed as phase change layer. The minimum reset voltage of PCRAM based on superlattice-like electrode was significantly lower than that of one based on the conventional electrode. The set operation can be completed by an electric pulse as short as 5 ns. The superlattice-like-electrode-based PCRAM can be normally operated at 120 degrees C with endurance up to 1 x 10(6) cycles. The low thermal conductivity of superlattice-like electrode is responsible for the performance improvement of PCRAM. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4751258]
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页数：4
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