Wide-bandwidth InGaP-GaAsHBT voltage-controlled oscillators in K- and Ku-band

被引：4

作者：

Chiong, Chau-Ching ^{[1
]}

Chang, Hong-Yeh ^{[2
]}

Chen, Ming-Tang ^{[1
]}

机构：

[1] Acad Sinica, Inst Astron & Astrophys, POB 23-141, Taipei 10617, Taiwan

[2] Natl Cent Univ, Dept Elect Engn, Jhongli 32001, Taiwan

来源：

2008 GLOBAL SYMPOSIUM ON MILLIMETER WAVES | 2008年

关键词：

GaAs; HBT; VCO; wide tuning range; low phase noise;

D O I：

10.1109/GSMM.2008.4534594

中图分类号：

P1 [天文学];

学科分类号：

0704 ;

摘要：

A series of voltage-controlled oscillator (VCO) covering 12 to 21 GM with double-tuned configuration using commercially available 2-mu m GaAs heterojunction bipolar transistor (HBT) technology is presented. Double-tuned topology improves the tuning bandwidth and linearity in voltage sensitivity. The tuning bandwidth of the VCOs ranges from 21 to 25%, with phase noise of -117 to -124 dBc/Hz at 1 MHz offset from the carrier. The overall dc power consumption of the VCO is 75 mW with a supply voltage of -3 V. To the best authors' knowledge, this work demonstrates the best FOM among all the reported VCOs at K- and Ku-band, when tuning range is taken into account.

引用

页码：185 / +

页数：2

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