A High-Sensitivity Low-Power CMOS Sensor for a Future Neutron Personal Dosimeter

被引：10

作者：

Zhang, Ying ^{[1
]}

Hu-Guo, Christine ^{[1
]}

Husson, Daniel ^{[1
]}

Le, The-Duc ^{[1
]}

Higueret, Stephane ^{[1
]}

Hu, Yann ^{[1
]}

机构：

[1] Univ Strasbourg, IPHC, F-67037 Strasbourg, France

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2012年 / 59卷 / 04期

关键词：

CMOS sensor; electronic personal dosimeters (EPDs); low-noise low-power circuit; neutron dosimeter; DETECTOR;

D O I：

10.1109/TNS.2012.2195676

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Despite a continuously increasing demand, neutron electronic personal dosimeters (EPDs) are still far from being completely established. A high sensitivity, low power consumption CMOS sensor for a future neutron personal dosimeter has been implemented in a 0.35 mu m CMOS technology. The 2.56 x 2.56 mm(2) sensing part is a micro-diode system of very low capacitance, implemented on the same substrate than the readout electronics. The excess electrons generated by an impinging particle are collected by the micro-diodes through thermal diffusion. The charge collection time and efficiency are the crucial points of a CMOS detector. We performed 3-D device simulations, using the commercially available Synopsys-SENTAURUS package, to address the detailed charge collection process. A charge sensitive amplifier (CSA) and a shaper are employed in the front-end readout. In this paper, the first electrical tests and alpha-measurements are presented.

引用

页码：1465 / 1471

页数：7

共 17 条

[1] A high-speed low-noise transimpedance amplifier in a 0.25 μm CMOS technology [J].