Simplified Model for Radiation Effects in MOS Devices

被引：0
作者：
Sambuco Salomone, L. [1 ]
Faigon, A. [1 ,2 ]
机构：
[1] Univ Buenos Aires, Fac Ingn, INTECIN, Device Phys Microelect Lab, Av Paseo Colon 850,CI063ACV, Buenos Aires, DF, Argentina
[2] Consejo Nacl Invest Cient & Tecn, RA-1033 Buenos Aires, DF, Argentina
来源：
2016 ARGENTINE CONFERENCE OF MICRO-NANOELECTRONICS, TECHNOLOGY AND APPLICATIONS (CAMTA) | 2016年
关键词：
MOSFETs; radiation effects; dosimeters; CHARGE; IRRADIATION; DOSIMETERS; SIMULATION; LEAKAGE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The spatial distribution of trapped holes in the gate oxide of MOS exposed to ionizing radiation plays a significant role in the dynamics of the threshold voltage shift with dose, specially when switched bias measurements are considered. In this work, we analyze currently available simplified models stressing out their limitations when dealing with complex measurements. Therefore, we present a simplified model based on the fitting of the evolution with dose of the spatial distribution of trapped holes obtained from a physics-based numerical model. For that, a two-exponential expression was considered, with four fitting parameters. Then, the change with dose of these parameters is considered. The effect the variation of the capture and neutralization rates has on the spatial distribution of trapped holes is analyzed to better understanding radiation effects in MOS devices and also to contribute to the development of simplified numerical models capable of reproducing complex dynamics.
引用
收藏
页码：27 / 32
页数：6
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