Electrical and photovoltaic properties of heterojunction diode based on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)

被引：7
作者：
Caglar, Mujdat [1 ]
机构：
[1] Anadolu Univ, Dept Phys, TR-26470 Eskisehir, Turkey
来源：
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 2012年 / 60卷 / 03期
关键词：
CURRENT-VOLTAGE CHARACTERISTICS; SEMICONDUCTOR; PARAMETERS; PHOTODIODE; LAYER;
D O I：
10.1051/epjap/2012120034
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
n-Si/p-PEDOT-PSS heterojunction diode was fabricated by deposition of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) onto n-type Si wafer using spin coating. Its electrical properties of the diode were investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The field emission scanning electron microscopy (FE-SEM) was used to determine the surface quality. SEM result indicates that the surface morphology of the PEDOT-PSS film spin coated on n-Si substrate is almost homogeneous. Diode parameters such as the ideality factor, barrier height and series resistance were calculated using Cheung's method and C-V measurements. characteristics under dark and illumination conditions were performed to characterize the photovoltaic behavior of the diode.
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页数：5
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