Quantum Capacitance in Topological Insulators

被引:30
作者
Xiu, Faxian [1 ]
Meyer, Nicholas [1 ]
Kou, Xufeng [2 ]
He, Liang [2 ]
Lang, Murong [2 ]
Wang, Yong [3 ,4 ]
Yu, Xinxin [2 ]
Fedorov, Alexei V. [5 ]
Zou, Jin [6 ]
Wang, Kang L. [2 ]
机构
[1] Iowa State Univ, Dept Elect & Comp Engn, Ames, IA 50011 USA
[2] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
[3] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
[4] Zhejiang Univ, Dept Mat Sci & Engn, Ctr Electron Microscopy, Hangzhou 310027, Peoples R China
[5] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Adv Light Source Div, Berkeley, CA 94720 USA
[6] Univ Queensland, Ctr Microcopy & Microanal, Brisbane, Qld 4072, Australia
基金
美国国家科学基金会;
关键词
SINGLE DIRAC CONE; SURFACE-STATES; TRANSPORT; BI2SE3; PHASE; VOLTAGE;
D O I
10.1038/srep00669
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Topological insulators show unique properties resulting from massless, Dirac-like surface states that are protected by time-reversal symmetry. Theory predicts that the surface states exhibit a quantum spin Hall effect with counter-propagating electrons carrying opposite spins in the absence of an external magnetic field. However, to date, the revelation of these states through conventional transport measurements remains a significant challenge owing to the predominance of bulk carriers. Here, we report on an experimental observation of Shubnikov-de Haas oscillations in quantum capacitance measurements, which originate from topological helical states. Unlike the traditional transport approach, the quantum capacitance measurements are remarkably alleviated from bulk interference at high excitation frequencies, thus enabling a distinction between the surface and bulk. We also demonstrate easy access to the surface states at relatively high temperatures up to 60 K. Our approach may eventually facilitate an exciting exploration of exotic topological properties at room temperature.
引用
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页数:7
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