Analytical model for the electric field distribution in SOI RESURF and TMBS structures

被引：54

作者：

Merchant, S ^{[1
]}

机构：

[1] Motorola Inc, Semicond Prod Sector, Mesa, AZ 85202 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1999年 / 46卷 / 06期

关键词：

analytical model; electric field; high-voltage; RESURF; Schottky rectifier; SOI; TMBS;

D O I：

10.1109/16.766896

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple analytical model for the electric field distribution in silicon-on-insulator (SOI) reduced surface field (RESURF) structures is developed. The model applies for uniform and linearly graded doping profiles. It is also applicable to trench MOS barrier Schottky (TMBS) rectifiers, which have a similar structure. The results are valuable for breakdown voltage, tunneling, hot carrier, and other electric field dependent analyses.

引用

页码：1264 / 1267

页数：4

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