Synthesizing single-crystal diamond by repetition of high rate homoepitaxial growth by microwave plasma CVD

被引：94

作者：

Mokuno, Y ^{[1
]}

Chayahara, A ^{[1
]}

Soda, Y ^{[1
]}

Horino, Y ^{[1
]}

Fujimori, N ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Diamond Res Ctr, Ikeda, Osaka 5638577, Japan

来源：

关键词：

high rate growth; microwave plasma CVD; homoepitaxial growth;

D O I：

10.1016/j.diamond.2005.09.020

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Repetition of high rate homoepitaxial growth of diamond by microwave plasma CVD has been successfully applied to the growth of single-crystal diamonds with the thickness as large as 10 ram. By optimizing the shape of the substrate holder, smooth and flat surface morphology suitable for regrowth has been obtained. Using this condition, a 4.65 ct single-crystal diamond with the thickness of 1 cm has been grown on a HPHT synthetic 5 x 5 x 0.7 mm(3) seed by 24 times repetition of high rate growth with the average growth rate of 68 mu m/h. Also a method to enlarge the size of diamond three-dimensionally by growing on side {100} surface of a thick diamond prepared by this technique has been demonstrated. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：1743 / 1746

页数：4

共 43 条

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