A self-aligned double-gate polysilicon TFT technology

被引：0

作者：

Zhang, SD ^{[1
]}

Han, R ^{[1
]}

Sin, JKO ^{[1
]}

Chan, MS ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept EEE, Kowloon, Hong Kong, Peoples R China

来源：

2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS | 2001年

关键词：

D O I：

10.1109/ISDRS.2001.984527

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：395 / 398

页数：4

共 6 条

[1] RECESSED-CHANNEL STRUCTURE FOR FABRICATING ULTRATHIN SOI MOSFET WITH LOW SERIES RESISTANCE [J].

CHAN, MS ;

ASSADERAGHI, F ;

PARKE, SA ;

HU, CM ;

KO, PK .

IEEE ELECTRON DEVICE LETTERS, 1994, 15 (01) :22-24

[2] Kink-free polycrystalline silicon double-gate elevated-channel thin-film transistors [J].

Kumar, A ;

Sin, JKO ;

Nguyen, CT ;

Ko, PK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (12) :2514-2520

[3] A C-switch cell for low-voltage and high-density SRAM's [J].

Kuriyama, H ;

Ishigaki, Y ;

Fujii, Y ;

Maegawa, S ;

Maeda, S ;

Miyamoto, S ;

Tsutsumi, K ;

Miyoshi, H ;

Yasuoka, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (12) :2483-2488

[4] POLYSILICON TFT CIRCUIT-DESIGN AND PERFORMANCE [J].

LEWIS, AG ;

LEE, DD ;

BRUCE, BH .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1992, 27 (12) :1833-1842

[5] Polysilicon VGA active matrix OLED displays - Technology and performance [J].

Stewart, M ;

Howell, RS ;

Pires, L ;

Hatalis, MK ;

Howard, W ;

Prache, O .

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, :871-874

[6]

WERNER K, 1997, IEEE SPECTRUM, V34, P45

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