Carrier Injections in Nitride-Based Light Emitting Diodes Including Two Active Regions with Mg-Doped Intermediate Layers

被引：13

作者：

Matsui, Kenjo ^{[1
]}

Yamashita, Koji ^{[1
]}

Kaga, Mitsuru ^{[1
]}

Morita, Takatoshi ^{[1
]}

Suzuki, Tomoyuki ^{[1
]}

Takeuch, Tetsuya ^{[1
]}

Kamiyama, Satoshi ^{[1
]}

Iwaya, Motoaki ^{[1
]}

Akasaki, Isamu ^{[1
,2
]}

机构：

[1] Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan

[2] Nagoya Univ, Akasaki Res Ctr, Nagoya, Aichi 4648603, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 08期

关键词：

D O I：

10.7567/JJAP.52.08JG02

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We achieved simultaneous two emissions from a single light emitting diode containing violet and blue GaInN/GaN quantum well active regions separated with an intermediate layer. By adjusting a thickness of a Mg-doped region in the intermediate layer, an intensity ratio between violet and blue emissions was changed, caused by different carrier distributions in the two active regions. The intensity ratio from two active regions was also changed by changing an amount of current injection. An unintentional Mg incorporation into the active region above the Mg-doped intermediate layer was observed, which is due to Mg memory effect. (C) 2013 The Japan Society of Applied Physics

引用

页数：4

共 15 条

[1] Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes [J].

Charash, R. ;

Maaskant, P. P. ;

Lewis, L. ;

McAleese, C. ;

Kappers, M. J. ;

Humphreys, C. J. ;

Corbett, B. .

APPLIED PHYSICS LETTERS, 2009, 95 (15)

[2] Nitride-based cascade near white light-emitting diodes [J].

Chen, CH ;

Chang, SJ ;

Su, YK ;

Sheu, JK ;

Chen, JF ;

Kuo, CH ;

Lin, YC .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (07) :908-910

[3] InGaN/GaN multiple quantum wells grown on microfacets for white-light generation [J].

Cho, Chu-Young ;

Park, Il-Kyu ;

Kwon, Min-Ki ;

Kim, Ja-Yeon ;

Park, Seong-Ju ;

Jung, Dong-Ryul ;

Kwon, Kwang-Woo .

APPLIED PHYSICS LETTERS, 2008, 93 (24)

[4]

Corzine S. W., 1989, IEEE Photonics Technology Letters, V1, P52, DOI 10.1109/68.87894

[5] InGaN/GaN multiple quantum well solar cells with long operating wavelengths [J].

Dahal, R. ;

Pantha, B. ;

Li, J. ;

Lin, J. Y. ;

Jiang, H. X. .

APPLIED PHYSICS LETTERS, 2009, 94 (06)

[6] Optically pumped (GaIn)As/Ga(PAs) vertical-cavity surface-emitting lasers with optimized dynamics [J].

Ellmers, C ;

Hofmann, MR ;

Karaiskaj, D ;

Leu, S ;

Stolz, W ;

Rühle, WW ;

Hilpert, M .

APPLIED PHYSICS LETTERS, 1999, 74 (10) :1367-1369

[7] Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting [J].

Funato, Mitsuru ;

Kondou, Takeshi ;

Hayashi, Keita ;

Nishiura, Shotaro ;

Ueda, Masaya ;

Kawakami, Yoichi ;

Narukawa, Yukio ;

Mukai, Takashi .

APPLIED PHYSICS EXPRESS, 2008, 1 (01)

[8] Prestrained effect on the emission properties of InGaN/GaN quantum-well structures [J].

Huang, Chi-Feng ;

Tang, Tsung-Yi ;

Huang, Jeng-Jie ;

Shiao, Wen-Yu ;

Yang, C. C. ;

Hsu, Chih-Wei ;

Chen, L. C. .

APPLIED PHYSICS LETTERS, 2006, 89 (05)

[9] Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths [J].

Li, YL ;

Gessmann, T ;

Schubert, EF ;

Sheu, JK .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (04) :2167-2172

[10] Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Sugimoto, Y ;

Kiyoku, H .

APPLIED PHYSICS LETTERS, 1996, 69 (26) :4056-4058

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