Deep level transient spectroscopy of cyanide treated polycrystalline p-Cu2O/n-ZnO solar cell

被引：48

作者：

Paul, G. K. ^{[1
]}

Ghosh, R. ^{[1
]}

Bera, S. K. ^{[2
]}

Bandyopadhyay, S. ^{[3
]}

Sakurai, T. ^{[4
]}

Akimoto, K. ^{[4
]}

机构：

[1] Haldia Inst Technol, Dept Engn Sci, Purba Medinipur 721657, W Bengal, India

[2] Tamralipta Mahavidyalaya, Dept Phys, Purba Medinipur 721636, W Bengal, India

[3] Univ Calcutta, Dept Phys, Kolkata 700009, W Bengal, India

[4] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

来源：

CHEMICAL PHYSICS LETTERS | 2008年 / 463卷 / 1-3期

关键词：

D O I：

10.1016/j.cplett.2008.08.065

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Deep levels in polycrystalline p-Cu2O/i-ZnO/n-ZnO/glass photovoltaic structures were studied by deep level transient spectroscopy (DLTS). Post-deposition crown-ether cyanide (CN) treatments of the samples were performed with the variation of time. DLTS spectra for all samples showed the presence of two traps localized at 0.2 eV and 0.5 eV from the top of the valence band. Effects of defect passivation and improvement of cell performance were demonstrated with the cyanide treated samples. Optimum time of cyanide treatment was found to be 3 min. Cell performance was increased from 0.4% to 0.7% for the samples undergoing the optimum post-deposition cyanide treatment. (c) 2008 Elsevier B. V. All rights reserved.

引用

页码：117 / 120

页数：4

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