Frenkel pair accumulation induced crystallization of amorphous MgAl2O4

被引：18

作者：

Chartier, Alain ^{[1
]}

Yamamoto, Tomokazu ^{[1
,2
]}

Yasuda, Kazuhiro ^{[2
]}

Meis, Constantin ^{[3
]}

Matsumura, Syo ^{[2
]}

机构：

[1] CEA Saclay, DEN, DANS, DPC,SCP,LM2T, F-91191 Gif Sur Yvette, France

[2] Kyushu Univ, Dept Appl Quantum Phys & Nucl Engn, Fukuoka 8190395, Japan

[3] CEA Saclay, INSTN, UESMS, F-91191 Gif Sur Yvette, France

来源：

JOURNAL OF NUCLEAR MATERIALS | 2008年 / 378卷 / 02期

基金：

日本学术振兴会;

关键词：

D O I：

10.1016/j.jnucmat.2008.06.027

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The epitaxial and homogeneous irradiation induced re-crystallization of amorphous MgAl2O4 was studied by means of continuous Frenkel pair accumulation in the molecular dynamics framework. Present results point out that the re-crystallization induced by Frenkel pair accumulation appears in both cases to be thermally enhanced but non diffusive. It is governed by a local rearrangement of each point defect in the homogeneous case, while spontaneous Frenkel pair recombination process in the crystalline part or at the interface drives the re-crystallization in the epitaxial case. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：188 / 192

页数：5

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