Preparation and characterization of Sb2Se3 thin films by electrodeposition and annealing treatment

被引：81

作者：

Lai, Yanqing ^{[1
,2
]}

Chen, Zhiwei ^{[1
]}

Han, Can ^{[1
]}

Jiang, Liangxing ^{[1
]}

Liu, Fangyang ^{[1
]}

Li, Jie ^{[1
]}

Liu, Yexiang ^{[1
]}

机构：

[1] Cent S Univ, Sch Met Sci & Engn, Changsha 410083, Peoples R China

[2] Cent S Univ Shenzhen, Res Inst, Engn Res Ctr High Performance Battery Mat & Devic, Shenzhen 518057, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2012年 / 261卷

基金：

中国国家自然科学基金; 国家高技术研究发展计划(863计划);

关键词：

Sb2Se3; Thin films; Electrodeposition; Annealing; Solar cells; ANTIMONY SELENIDE; OPTICAL-PROPERTIES; DEPOSITION;

D O I：

10.1016/j.apsusc.2012.08.046

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Antimony selenide (Sb2Se3) thin films were prepared on SnO2 coated glass substrates from acidic aqueous solution by potentiostatic electrodeposition and then post annealed at 300 degrees C in Ar atmosphere. Cyclic voltammetry (CV), energy dispersive X-ray spectroscopy (EDS), and environmental scanning electron microscope (ESEM) studies were performed on as-deposited Sb2Se3 thin films to obtain suitable electrodeposition conditions. The annealed film shows improved crystallinity with a basic structure of orthorhombic Sb2Se3, and exhibits an optical absorption coefficient of higher than 105 cm(-1) in the visible region and an optical band gap of 1.04 +/- 0.01 eV. Photoelectrochemical (PEC) tests confirm the p-type conductivity and good photovoltaic conversion characteristics of the annealed film. (C) 2012 Elsevier B. V. All rights reserved.

引用

页码：510 / 514

页数：5

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