Memristors: Devices, Models, and Applications

被引：157

作者：

Mazumder, Pinaki ^{[1
]}

Kang, Sung Mo ^{[2
,3
,4
]}

Waser, Rainer ^{[5
,6
,7
,8
,9
,10
,11
]}

机构：

[1] AT&T Bell Labs, Ind R&D Ctr, Murray Hill, NJ USA

[2] Univ Calif Santa Cruz, Jack Baskin Sch Engn, Santa Cruz, CA 95064 USA

[3] Univ Calif Merced, Merced, CA USA

[4] UIUC, Dept Elect & Comp Engn, Urbana, IL USA

[5] Philips Res Labs, Aachen, Germany

[6] Rhein Westfal TH Aachen, Fac Elect Engn & Informat Technol, Aachen, Germany

[7] Forschungszentrum Julich, Inst Solid State Res IFF, Julich, Germany

[8] Helmholtz Assoc, Germany Natl Res Ctr, Res Program Nanoelect Syst, Utrecht, Netherlands

[9] Fundamentals Future Informat Technol JARA FIT, Julich Aachen Res Alliance, Aachen, Germany

[10] Rhein Westfal TH Aachen, Fac Phys, Aachen, Germany

[11] Xi An Jiao Tong Univ, Xian, Peoples R China

来源：

PROCEEDINGS OF THE IEEE | 2012年 / 100卷 / 06期

关键词：

RANDOM-ACCESS MEMORY; RESISTANCE; ARCHITECTURES; COEXISTENCE; MECHANISMS;

D O I：

10.1109/JPROC.2012.2190812

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1911 / 1919

页数：9

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