Local Crystallization of LaB6 Yielding Compact, Strong Thermionic Electron Emission Source

被引:5
作者
Choi, Jun Hee [1 ]
Ahn, Ho Young [1 ]
Lee, Yun Sung [1 ]
Yang, Min Ho [1 ]
Baik, Chan-Wook [1 ]
Cho, Kyung Sang [1 ]
Kim, Sun Il [1 ]
Jeong, Seong-Jun [1 ]
Jeon, Jong-Myeong [2 ]
Kim, Miyoung [2 ]
Hwang, Sungwoo [1 ]
机构
[1] Samsung Adv Inst Technol, Kiheung 449712, South Korea
[2] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 137779, South Korea
基金
新加坡国家研究基金会;
关键词
LaB6; local heating; thermionic emission; LIGHT-EMITTING-DIODES; ARRAYS;
D O I
10.1109/LED.2013.2277853
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Local microheating of amorphous LaB6 film could control the degree of crystallization as determined by spatially resolved Raman spectroscopy and transmission electron microscopy. With full crystallization of the LaB6, we achieved micrometer-sized thermionic electron emission source with the maximum current density of 1.2 A/cm(2). The advantage of fabricating a micrometer-sized emitter with high current density enables versatile applications such as compact X-ray or vacuum type terahertz radiation sources. A new structure of micrometer-sized, lateral-type vacuum channel transistor is proposed based on the simulation. The calculated electron travelling time from emitter-to-collector was 8.3 ps at the traveling distance of similar to 10 mu m, meaning that the maximum operation frequency is 120 GHz.
引用
收藏
页码:1322 / 1324
页数:3
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