FAR INFRARED PHOTO DETECTOR BASED ON ELECTROMAGNETICALLY INDUCED TRANSPARENCY

被引：6
作者：
Asadpour, Seyyed Hossein [1 ]
Soltani, Amir [2 ]
Majd, Abdullah Eslami [2 ]
Soleimani, Hamid Rahimpour [1 ]
机构：
[1] Univ Guilan, Fac Sci, Dept Phys, Rasht, Iran
[2] Univ Tabriz, Sch Engn & Emerging Technol, Tabriz, Iran
来源：
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2013年 / 27卷 / 05期
关键词：
Quantum dot infrared photo detector (QDIP); electromagnetically induced transparency (EIT); INAS QUANTUM DOTS; HIGH DETECTIVITY; PHOTODETECTORS;
D O I：
10.1142/S0217979213500045
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this paper, we design a room temperature long wavelength quantum dot infrared photo detector (QDIP) by considering the principle of electromagnetically induced transparency (EIT) in a nanocrystal composed of a spherical GaAs quantum dot (QD) embedded in InAs. It is shown that the presence of long wavelength infrared (IR) signal in the medium affects on the absorption of visible optical probe (lambda(p)) in proposed photo detector. The far IR wavelength (lambda FIR) can be tuned to be 20 mu m by means of external voltage and the size of QD. It is found that increasing the magnitude of far IR signal in the medium results in increase of optical probe signal absorption.
引用
收藏
页数：13
相关论文
共 22 条
[1]  
Adachi S., WILEY SERIES MAT ELE
[2]  
Basu J.P.K., 1997, THEORY OPTICAL PROCE
[3]  
Boyd RW, 2008, NONLINEAR OPTICS, 3RD EDITION, P1
[4]   Modeling of dark current in midinfrared quantum well infrared photodetectors [J].
Castellano, Fabrizio ;
Rossi, Fausto ;
Faist, Jerome ;
Lhuillier, Emmanuel ;
Berger, Vincent .
PHYSICAL REVIEW B, 2009, 79 (20)
[5]   High-temperature operation of InAs-GaAs quantum-dot infrared photodetectors with large responsivity and detectivity [J].
Chakrabarti, S ;
Stiff-Roberts, AD ;
Bhattacharya, P ;
Gunapala, S ;
Bandara, S ;
Rafol, SB ;
Kennerly, SW .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (05) :1361-1363
[6]   Lateral intersubband photocurrent spectroscopy on InAs/GaAs quantum dots [J].
Chu, L ;
Zrenner, A ;
Böhm, G ;
Abstreiter, G .
APPLIED PHYSICS LETTERS, 2000, 76 (14) :1944-1946
[7]   In0.5Ga0.5As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition [J].
Fu, L ;
Lever, R ;
Sears, K ;
Tan, HH ;
Jagadish, C .
IEEE ELECTRON DEVICE LETTERS, 2005, 26 (09) :628-630
[8]   Dark current analysis of quantum cascade detectors by magnetoresistance measurements [J].
Gomez, Aurore ;
Pere-Laperne, Nicolas ;
de Vaulchier, Louis-Anne ;
Koeniguer, Cedric ;
Vasanelli, Angela ;
Nedelcu, Alexandru ;
Marcadet, Xavier ;
Guldner, Yves ;
Berger, Vincent .
PHYSICAL REVIEW B, 2008, 77 (08)
[9]  
Kim Eui-Tae., APPL PHYS LETT, V84, P3277
[10]   Room temperature far infrared (8∼10 μm) photodetectors using self-assembled InAs quantum dots with high detectivity [J].
Kim, JW ;
Oh, JE ;
Hong, SC ;
Park, CH ;
Yoo, TK .
IEEE ELECTRON DEVICE LETTERS, 2000, 21 (07) :329-331
123