Inter-valence-band hole-hole scattering in cubic semiconductors

Transitions between valence subbands resulting from hole-hole scattering in cubic semiconductors have been analyzed in the frame of Coulomb interaction of valence electrons in the Luttinger-Kohn representation. Expressions for transition rates are derived. Calculated rates for transitions between light- and heavy-hole bands are presented for germanium. Hole-hole scattering has remarkably different transition probabilities and scattering-angle dependence than for scattering of holes on ionized impurities. These results are particularly important for hole lifetimes and relative subband populations in unipolar p-type devices, such as the hot hole p-Ge laser. Features of hole-hole scattering for spin polarized hole distributions are also discussed.