Self-aligned inversion n-channel In0.2Ga0.8As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga2O3(Gd2O3) dielectric

被引：16

作者：

Chen, C. P. ^{[1
]}

Lin, T. D. ^{[1
]}

Lee, Y. J. ^{[1
]}

Chang, Y. C. ^{[1
]}

Hong, M. ^{[1
]}

Kwo, J. ^{[2
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

[2] Natl Tsing Hua Univ, Dept Phys, Hsinchu, Taiwan

来源：

SOLID-STATE ELECTRONICS | 2008年 / 52卷 / 10期

关键词：

MOSFET; GaAs; InGaAs; High kappa dielectric; Metal gate;

D O I：

10.1016/j.sse.2008.06.006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A self-aligned process for fabricating inversion n-channel metal-oxide-semiconductor field-effect-transistors (MOSFET's) of strained In0.2Ga0.8As on GaAs using TiN as gate metal and Ga2O3(Gd2O3) as high K gate dielectric has been developed. A MOSFET with a 4 pm gate length and a 100 pm gate width exhibits a drain current of 1.5 mA/mm at V-g = 4 V and V-d = 2 V, a low gate leakage of < 10(-7) A/cm(2) at 1 MV/cm, an extrinsic transconductance of 1.7 mS/mm at Vg = 3 V, V-d = 2 V, and an on/off ratio of similar to 10(5) in drain current. For comparison, a TiN/Ga2O3(Gd2O3)/In0.2Ga0.8As MOS diode after rapid thermal annealing (RTA) to high temperatures of 750 degrees C exhibits excellent electrical and structural performances: a low leakage current density of 10(-8)-10(-9) A/cm(2), well-behaved capacitance-voltage (C-V) characteristics giving a high dielectric constant of similar to 16 and a low interfacial density of state of similar to(2 similar to 6) x 10(11) cm(-2) eV(-1), and an atomically sharp smooth Ga2O3(Gd2O3)/In0.2Ga0.8As interface. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：1615 / 1618

页数：4

共 24 条

[1] Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As [J].

Chang, C. -H. ;

Chiou, Y. -K. ;

Chang, Y. -C. ;

Lee, K. -Y. ;

Lin, T. -D. ;

Wu, T. -B. ;

Hong, M. ;

Kwo, J. .

APPLIED PHYSICS LETTERS, 2006, 89 (24)

[2] Atomic-layer-deposited HfO2 on In0.53Ga0.47As:: Passivation and energy-band parameters [J].

Chang, Y. C. ;

Huang, M. L. ;

Lee, K. Y. ;

Lee, Y. J. ;

Lin, T. D. ;

Hong, M. ;

Kwo, J. ;

Lay, T. S. ;

Liao, C. C. ;

Cheng, K. Y. .

APPLIED PHYSICS LETTERS, 2008, 92 (07)

[3]

CHEN CP, 2006, J APPL PHYS, V100, P702

[4] Enhancement-mode GaAs MOSFETs with an In0.3Ga0.7As channel, a mobility of over 5000 cm2/V•s, and transconductance of over 475 μS/μm [J].

Hill, Richard J. W. ;

Moran, David A. J. ;

Li, Xu ;

Zhou, Haiping ;

Macintyre, Douglas ;

Thoms, Stephen ;

Asenov, Asen ;

Zurcher, Peter ;

Rajagopalan, Karthik ;

Abrokwah, Jonathan ;

Droopad, Ravi ;

Passlack, Matthias ;

Thayne, Lain G. .

IEEE ELECTRON DEVICE LETTERS, 2007, 28 (12) :1080-1082

[5] Low interface state density oxide-GaAs structures fabricated by in situ molecular beam epitaxy [J].

Hong, M ;

Passlack, M ;

Mannaerts, JP ;

Kwo, J ;

Chu, SNG ;

Moriya, N ;

Hou, SY ;

Fratello, VJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03) :2297-2300

[6] Structural properties of Ga2O3(Gd2O3)-GaAs interfaces [J].

Hong, M ;

Marcus, MA ;

Kwo, J ;

Mannaerts, JP ;

Sergent, AM ;

Chou, LJ ;

Hsieh, KC ;

Cheng, KY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (03) :1395-1397

[7] Initial growth of Ga2O3(Gd2O3) on GaAs:: Key to the attainment of a low interfacial density of states [J].

Hong, M ;

Lu, ZH ;

Kwo, J ;

Kortan, AR ;

Mannaerts, JP ;

Krajewski, JJ ;

Hsieh, KC ;

Chou, LJ ;

Cheng, KY .

APPLIED PHYSICS LETTERS, 2000, 76 (03) :312-314

[8] Energy-band parameters of atomic-layer-deposition Al2O3/InGaAs heterostructure [J].

Huang, M. L. ;

Chang, Y. C. ;

Chang, C. H. ;

Lin, T. D. ;

Kwo, J. ;

Wu, T. B. ;

Hong, M. .

APPLIED PHYSICS LETTERS, 2006, 89 (01)

[9] Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3 -: art. no. 252104 [J].

Huang, ML ;

Chang, YC ;

Chang, CH ;

Lee, YJ ;

Chang, P ;

Kwo, J ;

Wu, TB ;

Hong, M .

APPLIED PHYSICS LETTERS, 2005, 87 (25) :1-3

[10] Thermodynamic stability of Ga2O3(Gd2O3)/GaAs interface -: art. no. 191905 [J].

Huang, YL ;

Chang, P ;

Yang, ZK ;

Lee, YJ ;

Lee, HY ;

Liu, HJ ;

Kwo, J ;

Mannaerts, JP ;

Hong, M .

APPLIED PHYSICS LETTERS, 2005, 86 (19) :1-3

← 1 2 3 →