Epitaxial growth of SiGe thin films by ion-beam sputtering

被引：10
作者：
Sasaki, K
Nakata, K
Hata, T
机构：
[1] Dept. of Elec. and Comp. Engineering, Kanazawa University, Kanazawa 920
来源：
APPLIED SURFACE SCIENCE | 1997年 / 113卷
关键词：
D O I：
10.1016/S0169-4332(96)00802-1
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Epitaxial growth of Si and SiGe film on Si(100) substrate is investigated by employing a ion-beam sputtering technique. SiGe films are prepared by layer by layer sequence using the alternate sputtering method. Marked island growth of Ge film is confirmed at a higher substrate temperature than 600 degrees C. Ho Homo-epitaxial growth of Si starts at a substrate temperature of 400 degrees C. At 600 degrees C the RHEED image of Si film shows a clear streak pattern, further increasing to 670 degrees C it shows a Kikuchi-line. As for Si0.75Ge0.25 film, hetero-epitaxial growth takes place at 450 degrees C after poly-crystalline growth region. At 500 degrees C hetero-epitaxial film with considerably good crystallinity is obtained with suppressing surface roughness.
引用
收藏
页码：43 / 47
页数：5
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