Emission enhancement of light-emitting diode by localized surface plasmon induced by Ag/p-GaN double grating

被引:15
作者
Xie, Ruijie [1 ]
Li, Zhiquan [1 ]
Li, Xin [2 ]
Gu, Erdan [3 ]
Niu, Liyong [1 ]
Sha, Xiaopeng [4 ]
机构
[1] Yanshan Univ, Inst Elect Engn, Qinhuangdao 066004, Peoples R China
[2] Hebei Normal Univ Sci & Technol, Sch Math & Sci & Technol Informat, Qinhuangdao 066004, Peoples R China
[3] Strathclyde Univ, Dept Phys, Inst Photon, Glasgow, Lanark, Scotland
[4] Northeastern Univ Qinhuangdao, Sch Control Engn, Qinhuangdao 066004, Peoples R China
关键词
Light-emitting diodes; Localized surface plasmon; Emission efficiency; Grating; Radiated powers; Absorbed powers; IMPROVEMENT;
D O I
10.1016/j.optcom.2018.03.012
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In this paper, a new type of light-emitting diodes (LEDs) structure is designed to enhance the light emission efficiency of GaN-based LEDs. The structure mainly includes Ag grating, ITO layer and p-GaN grating. The principle of stimulating the localized surface plasmon to improve the luminous characteristics of the LED by using this structure is discussed. Based on the COMSOL software, the finite element method is used to simulate the LED structure. The normalized radiated powers, the normalized absorbed powers under different wavelength and geometric parameters, and the distribution of the electric field with the particular geometric parameters are obtained. The simulation results show that with a local ITO thickness of 32 nm, an etching depth of 29 nm, a grating period of 510 nm and a duty ratio of 0.5, the emission intensity of the designed GaN-based LED structure has increased by nearly 55 times than the ordinary LED providing a reliable foundation for the development of high-performance GaN-based LEDs.
引用
收藏
页码:108 / 113
页数:6
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