Synthesis and characterization of metallic TaSi2 nanowires -: art. no. 223113

被引：29
作者：
Chueh, YL
Chou, LJ [1 ]
Cheng, SL
Chen, LJ
Tsai, CJ
Hsu, CM
Kung, SC
机构：
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan
[2] Ind Technol Res Inst, Mat Res Labs, Hsinchu 31015, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 22期
关键词：
D O I：
10.1063/1.2132523
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
TaSi2 nanowires have been synthesized by annealing FeSi2 thin film and nanodots grown on a Si substrate in an ambient containing Ta vapor. The TaSi2 nanowires are formed in three steps; segregation of Si atoms from the FeSi2 underlayer to form Si base, growth of TaSi2 nanodots on Si base, and elongation of TaSi2 nanowire along the growth direction. Strong field-emission properties promise future electronics and optoelectronics applications. (c) 2005 American Institute of Physics.
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页码：1 / 3
页数：3
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