Transformation volume strain in Ni-Mn-Ga thin films

被引：8

作者：

Aseguinolaza, I. R. ^{[1
,2
]}

Reyes-Salazar, I. ^{[1
,2
]}

Svalov, A. V. ^{[1
,2
]}

Wilson, K. ^{[3
]}

Knowlton, W. B. ^{[3
]}

Ullner, P. M. ^{[3
]}

Barandiaran, J. M. ^{[1
,2
]}

Villa, E. ^{[4
]}

Chernenko, V. A. ^{[1
,2
,5
]}

机构：

[1] Univ Basque Country UPV EHU, BCMat, Bilbao 48080, Spain

[2] Univ Basque Country UPV EHU, Dept Elect & Elect, Bilbao 48080, Spain

[3] Boise State Univ, Dept Mat Sci & Engn, Boise, ID 83725 USA

[4] CNR IENI, I-23900 Lecce, Italy

[5] Basque Fdn Sci, Ikerbasque, Bilbao 48011, Spain

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 24期

基金：

美国国家科学基金会;

关键词：

BEHAVIOR; PHASE; MARTENSITES; STRESS;

D O I：

10.1063/1.4772005

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature dependences of the lattice parameters and residual stress have been measured for a fine-grained Ni52.2Mn26.8Ga21.0 (at. %) thin film fabricated by sputter deposition onto a heated silicon wafer with SiNx buffer layer. The transformation volume strain in the film was found to be a lattice expansion during the forward martensitic transformation which is opposite to a volume contraction exhibited by bulk Ni-Mn-Ga alloys. This unusual effect can be explained by the substrate-induced residual stresses in the film and the difference in the elastic modulus of austenite and martensite. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4772005]

引用

页数：4

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