Atomic layer deposition for nanoscale Cu metallization

被引：0

作者：

Basceri, C ^{[1
]}

Miller, MW ^{[1
]}

Castrovillo, P ^{[1
]}

Hou, VD ^{[1
]}

Holtzclaw, K ^{[1
]}

Smythe, J ^{[1
]}

Derderian, G ^{[1
]}

Ramarajan, S ^{[1
]}

Russell, SW ^{[1
]}

Sandhu, G ^{[1
]}

机构：

[1] Micron Technol Inc, R&D Ctr, Boise, ID 83707 USA

来源：

ADVANCED METALLIZATION CONFERENCE 2003 (AMC 2003) | 2004年

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This paper reports the significance of atomic layer deposition (ALD) technique in nanoscale copper (Cu) integration. A specific process development example is given with ALD TaN barrier film in terms of its growth characteristics, basic film properties, device performance and interaction with porous low-k dielectrics.

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页码：713 / 722

页数：10

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