A K-band AlGaN/GaN-based MMIC Amplifier with Microstrip Lines on Sapphire

被引：0
|
作者：
Murata, Tomohiro [1 ]
Kuroda, Masayuki [1 ]
Nagai, Shuichi [2 ]
Nishijima, Masaaki [1 ]
Ishida, Hidetoshi [1 ]
Yanagihara, Manabu [1 ]
Ueda, Tetsuzo [1 ]
Sakai, Hiroyuki [1 ]
Tanaka, Tsuyoshi [1 ]
Li, Ming [2 ]
机构：
[1] Matsushita Elect Ind Co Ltd, Semicond Co, Semicond Device Res Ctr, 1 Kotari Yakemachi, Nagaokakyo, Kyoto 6178520, Japan
[2] Panasonic Tech Co, Panasonic Boston Lab, Cambridge, MA 02142 USA
来源：
2008 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4 | 2008年
关键词：
AlGaN/GaN heterojunction FET; superlattices; MMIC amplifiers; sapphire; via hole; laser drilling; microstrip line;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a K-band AlGaN/GaN HFET MMIC amplifier with integrated microstrip lines on sapphire. The microstrip lines with via-holes through chemically stable sapphire are successfully formed for the first time by using a novel laser drilling technique. AlGaN/GaN HFETs with superlattice capping layers in the MMIC exhibit RF performance with f(max) of 160GHz and NFmin of 2.5dB at 28GHZ. The fabricated 3-stage MMIC amplifier exhibits a small-signal gain as high as 22dB at 26GHz with a 3dB bandwidth of 4GHz. The presented K-band MMIC would be applicable to future millimeter-wave communication systems.
引用
收藏
页码：845 / +
页数：2
相关论文
共 50 条
  • [41] K-band MMIC active band-pass filters
    Fan, KW
    Weng, CC
    Tsai, ZM
    Wang, H
    Jeng, SK
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2005, 15 (01) : 19 - 21
  • [42] GaN HEMT based Ku-band Power Amplifier MMIC
    Imran, Mohd.
    Gupta, Parul
    Reeta
    Mishra, Meena
    2022 IEEE MICROWAVES, ANTENNAS, AND PROPAGATION CONFERENCE, MAPCON, 2022, : 792 - 795
  • [43] High Power K-band GaN on SiC CPW Monolithic Power Amplifier
    Cengiz, Omer
    Sen, Ozlem
    Ozbay, Ekmel
    2014 9TH EUROPEAN MICROWAVE INTEGRATED CIRCUIT CONFERENCE (EUMIC), 2014, : 548 - 551
  • [44] High Power K-band GaN on SiC CPW Monolithic Power Amplifier
    Cengiz, Omer
    Sen, Ozlem
    Ozbay, Ekmel
    2014 44TH EUROPEAN MICROWAVE CONFERENCE (EUMC), 2014, : 1492 - 1495
  • [45] Wideband Phase Modulator MMIC for K-Band Supply-Modulated Power Amplifier Linearization
    Lasser, Gregor
    Nogales, Connor
    Duffy, Maxwell R.
    Popovic, Zoya
    2021 51ST EUROPEAN MICROWAVE CONFERENCE (EUMC), 2021, : 894 - 897
  • [46] Broadband GaN-Based Power Amplifier MMIC for V-Band With Saturated Output Power Over 2 W
    Guo, Fangjin
    Xu, Yuehang
    Wang, Weibo
    Chen, Zhongfei
    Luo, Chenjie
    Tao, Hongqi
    IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS, 2024, 34 (05): : 532 - 535
  • [47] A U-band Broadband Power Amplifier MMIC in 100 nm AlGaN/GaN HEMT Technology
    Schwantuschke, D.
    Brueckner, P.
    Quay, R.
    Mikulla, M.
    Ambacher, O.
    Kallfass, I.
    2012 42ND EUROPEAN MICROWAVE CONFERENCE (EUMC), 2012, : 1083 - 1086
  • [48] GaN-based E-band Power Amplifier Modules
    Schwantuschke, D.
    Henneberger, R.
    Wagner, S.
    Tessmanni, A.
    Kallfass, I.
    Brueckner, P.
    Quay, R.
    Ambacher, O.
    2016 46TH EUROPEAN MICROWAVE CONFERENCE (EUMC), 2016, : 564 - 567
  • [49] A 40 W AlGaN/GaN MMIC High Power Amplifier for C-Band Radar Applications
    Jeong, Jin-Cheol
    Jang, Dong-Pil
    Yom, In-Bok
    2014 44TH EUROPEAN MICROWAVE CONFERENCE (EUMC), 2014, : 1126 - 1129
  • [50] A U-band Broadband Power Amplifier MMIC in 100 nm AlGaN/GaN HEMT Technology
    Schwantuschke, D.
    Brueckner, P.
    Quay, R.
    Mikulla, M.
    Ambacher, O.
    Kallfass, I.
    2012 7TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2012, : 703 - 706
12345