A K-band AlGaN/GaN-based MMIC Amplifier with Microstrip Lines on Sapphire

被引：0
|
作者：
Murata, Tomohiro [1 ]
Kuroda, Masayuki [1 ]
Nagai, Shuichi [2 ]
Nishijima, Masaaki [1 ]
Ishida, Hidetoshi [1 ]
Yanagihara, Manabu [1 ]
Ueda, Tetsuzo [1 ]
Sakai, Hiroyuki [1 ]
Tanaka, Tsuyoshi [1 ]
Li, Ming [2 ]
机构：
[1] Matsushita Elect Ind Co Ltd, Semicond Co, Semicond Device Res Ctr, 1 Kotari Yakemachi, Nagaokakyo, Kyoto 6178520, Japan
[2] Panasonic Tech Co, Panasonic Boston Lab, Cambridge, MA 02142 USA
来源：
2008 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4 | 2008年
关键词：
AlGaN/GaN heterojunction FET; superlattices; MMIC amplifiers; sapphire; via hole; laser drilling; microstrip line;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a K-band AlGaN/GaN HFET MMIC amplifier with integrated microstrip lines on sapphire. The microstrip lines with via-holes through chemically stable sapphire are successfully formed for the first time by using a novel laser drilling technique. AlGaN/GaN HFETs with superlattice capping layers in the MMIC exhibit RF performance with f(max) of 160GHz and NFmin of 2.5dB at 28GHZ. The fabricated 3-stage MMIC amplifier exhibits a small-signal gain as high as 22dB at 26GHz with a 3dB bandwidth of 4GHz. The presented K-band MMIC would be applicable to future millimeter-wave communication systems.
引用
收藏
页码：845 / +
页数：2
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