Reverse leakage mechanism of Schottky barrier diode fabricated on homoepitaxial GaN

被引：20
作者：
Lei, Yong [1 ,2 ]
Lu, Hai [1 ]
Cao, Dongsheng [1 ]
Chen, Dunjun [1 ]
Zhang, Rong [1 ]
Zheng, Youdou [1 ]
机构：
[1] Nanjing Univ, Nanjing Natl Lab Microstruct, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China
[2] Nanjing Univ Informat Sci & Technol, Sch Phys & Optoelect Engn, Nanjing 210044, Jiangsu, Peoples R China
来源：
SOLID-STATE ELECTRONICS | 2013年 / 82卷
基金：
中国国家自然科学基金;
关键词：
Homoepitaxial GaN; Schottky barrier; Leakage current; Thermionic-field emission; Dislocations; MOLECULAR-BEAM EPITAXY; KELVIN PROBE MICROSCOPY; BIAS LEAKAGE; FIELD; DISLOCATIONS; EMISSION;
D O I：
10.1016/j.sse.2013.01.007
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, Schottky barrier diodes with vertical geometry were fabricated on low-defect-density homoepitaxial GaN for studying the reverse leakage mechanism of GaN-based Schottky contact. A leakage current model based on electron transmission primarily through linear defects like dislocations was suggested to explain the reverse current-voltage characteristics measured between 300 and 410 K, in which electrons from contact metal overcome the locally height-reduced Schottky barrier through thermionic-field emission. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码：63 / 66
页数：4
相关论文
共 23 条
[1]   Leakage current by Frenkel-Poole emission in Ni/Au Schottky contacts on Al0.83In0.17N/AlN/GaN heterostructures [J].
Arslan, Engin ;
Butun, Serkan ;
Ozbay, Ekmel .
APPLIED PHYSICS LETTERS, 2009, 94 (14)
[2]   CARRIER TRANSPORT ACROSS METAL-SEMICONDUCTOR BARRIERS [J].
CHANG, CY ;
SZE, SM .
SOLID-STATE ELECTRONICS, 1970, 13 (06) :727-+
[3]   GaN Schottky Barrier Photodetectors [J].
Chang, S. J. ;
Wang, S. M. ;
Chang, P. C. ;
Kuo, C. H. ;
Young, S. J. ;
Chen, T. P. ;
Wu, S. L. ;
Huang, B. R. .
IEEE SENSORS JOURNAL, 2010, 10 (10) :1609-1614
[4]   Schottky Barrier Height Inhomogeneity-Induced Deviation From Near-Ideal Pd/InAlN Schottky Contact [J].
Chen, Z. T. ;
Fujita, K. ;
Ichikawa, J. ;
Egawa, T. .
IEEE ELECTRON DEVICE LETTERS, 2011, 32 (05) :620-622
[5]   Leakage mechanism in GaN and AlGaN schottky interfaces [J].
Hashizume, T ;
Kotani, J ;
Hasegawa, H .
APPLIED PHYSICS LETTERS, 2004, 84 (24) :4884-4886
[6]   Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates [J].
Hsu, JWP ;
Manfra, MJ ;
Molnar, RJ ;
Heying, B ;
Speck, JS .
APPLIED PHYSICS LETTERS, 2002, 81 (01) :79-81
[7]   Scanning Kelvin probe microscopy characterization of dislocations in III-nitrides grown by metalorganic chemical vapor deposition [J].
Koley, G ;
Spencer, MG .
APPLIED PHYSICS LETTERS, 2001, 78 (19) :2873-2875
[8]   Low defect-mediated reverse-bias leakage in (0001) GaN via high-temperature molecular beam epitaxy [J].
Law, J. J. M. ;
Yu, E. T. ;
Koblmueller, G. ;
Wu, F. ;
Speck, J. S. .
APPLIED PHYSICS LETTERS, 2010, 96 (10)
[9]   High quality GaN-based Schottky barrier diodes [J].
Lee, K. H. ;
Chang, S. J. ;
Chang, P. C. ;
Wang, Y. C. ;
Kuo, C. H. .
APPLIED PHYSICS LETTERS, 2008, 93 (13)
[10]   Low leakage Schottky rectifiers fabricated on homoepitaxial GaN [J].
Lu, Hai ;
Zhang, Rong ;
Xiu, Xiangqian ;
Xie, Zili ;
Zheng, Youdou .
APPLIED PHYSICS LETTERS, 2007, 91 (17)
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