Effects of Thin-Film Thickness on Sensing Properties of SnO2-Based Gas Sensors for the Detection of H2S Gas at ppm Levels

被引:6
作者
Jo, Seong Bin [1 ]
Kim, Hyun Ji [2 ]
Ahn, Joong Hee [3 ]
Hwang, Byung Wook [4 ]
Huh, Jeung Soo [5 ]
Ragupathy, Dhanusuraman [6 ]
Lee, Soo Chool [1 ]
Kim, Jae Chang [2 ]
机构
[1] Kyungpook Natl Univ, Res Inst Adv Energy Technol, Daegu 41566, South Korea
[2] Kyungpook Natl Univ, Dept Chem Engn, Daegu 41566, South Korea
[3] Greenpia Technol Inc, Seoul 06258, South Korea
[4] Korea Inst Energy Res, Daejeon 34129, South Korea
[5] Kyungpook Natl Univ, Dept Mat Sci & Met, Daegu 41566, South Korea
[6] Natl Inst Technol Puducherry, Dept Chem, Karaikal 609609, India
关键词
Sensor; SnO2; H2S; Thin Film; Ion Sputtering; MECHANISM; BEHAVIOR; ELEMENT; OXIDES;
D O I
10.1166/jnn.2020.18854
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
SnO2 thin-film gas sensors were easily created using the ion sputtering technique. The as-deposited SnO(2 )thin films consist of a tetragonal SnO2 phase and densely packed nanosized grains with diameters of approximately 20-80 nm, which are separated by microcracks. The as-deposited SnO2 thin film is well crystallized, with a dense columnar nanostructure grown directly onto the alumina material and the Pt electrodes. The grain size and thickness of SnO2 thin films are easily controlled by varying the sputtering time of the ion coater. The responses of the SnO2 thin-film sensors decrease as the SnO2 film thickness is increased, indicating that a negative association exists between the sensor response and the SnO2 film thickness due to gas diffusion from the surface. The SnO2 thin-film sensor, which was created by ion sputtering for 10 min, shows an excellent sensor response (R-a/R-g, where R-a is the electric resistance under air and R-g is the electric resistance under the test gas) for detecting 1 ppm H2S at 350 degrees C.
引用
收藏
页码:7169 / 7174
页数:6
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