Self-Heating of Annealed Ti/Al/Ni/Au Contacts to Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures

被引：6

作者：

Sermuksnis, Emilis ^{[1
]}

Jorudas, Justinas ^{[2
]}

Simukovic, Artur ^{[1
]}

Kovalevskij, Vitalij ^{[2
]}

Kasalynas, Irmantas ^{[2
]}

机构：

[1] Ctr Phys Sci & Technol, Fluctuat Res Lab, Sauletekio Ave 3, LT-10257 Vilnius, Lithuania

[2] Ctr Phys Sci & Technol, Terahertz Photon Lab THz Atelier, Sauletekio Ave 3, LT-10257 Vilnius, Lithuania

来源：

APPLIED SCIENCES-BASEL | 2022年 / 12卷 / 21期

关键词：

Gallium nitride; AlGaN; GaN; TLM; HEMT; contact resistance; 2DEG; hot electrons; microwave noise; self-heating; MICROWAVE NOISE; OHMIC CONTACTS; HEMTS; RESISTANCE; DEGRADATION; TRANSISTORS; TRANSPORT; CHANNEL; DC;

D O I：

10.3390/app122111079

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this work, we investigated the self-heating effects of annealed Ti/Al/Ni/Au ohmic contacts and two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures under strong electric field by using the short pulse current-voltage and microwave noise measurement techniques. The experimental results demonstrated that the self-heating phenomena in ohmic contacts with the increase of current may dominate over the electrical performances of 2DEG channel. Moreover, the excess noise temperature of contact resistance was found to be more than four times higher than that of 2DEG channel at the same high current density values. The results reveal the importance of self-heating of the ohmic contacts on the device performance under short-duration (only 100 ns) and low-duty-cycle (only 10(-5)) pulse regime.

引用

页数：17

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