Low noise voltage and charge preamplifiers for phonon and ionization detectors at very low temperature

被引：12

作者：

Yvon, D

Cummings, A

Stockwell, W

Barnes, P

Stanton, C

Sadoulet, B

Shutt, T

Stubbs, C

机构：

[1] UNIV CALIF BERKELEY,CTR PARTICLE ASTROPHYS,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY,DEPT PHYS,BERKELEY,CA 94720

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1996年 / 368卷 / 03期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0168-9002(95)00665-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have developed voltage and charge sensitive FET preamplifiers which feature ultra low noise, convenience and flexibility for phonon and ionization detectors operated at 20 mK. With an NJ132L J-FET, the white noise of the voltage amplifier is 1.1 nV/root Hz at room temperature and 0.9 nV/root Hz when the FET is cooled to approximate to 120 K; the 1/f knee is below 100 Hz. The power dissipation of the FET, about 7 mW in our application, allows it to be used in a 4 K environment. With the same cooled FET, the charge amplifier has shown a noise of 120 e(-) rms with a total input capacitance of 45 pF.

引用

页码：778 / 788

页数：11

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