Low noise voltage and charge preamplifiers for phonon and ionization detectors at very low temperature

被引：12
作者：
Yvon, D
Cummings, A
Stockwell, W
Barnes, P
Stanton, C
Sadoulet, B
Shutt, T
Stubbs, C
机构：
[1] UNIV CALIF BERKELEY,CTR PARTICLE ASTROPHYS,BERKELEY,CA 94720
[2] UNIV CALIF BERKELEY,DEPT PHYS,BERKELEY,CA 94720
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1996年 / 368卷 / 03期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1016/0168-9002(95)00665-6
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We have developed voltage and charge sensitive FET preamplifiers which feature ultra low noise, convenience and flexibility for phonon and ionization detectors operated at 20 mK. With an NJ132L J-FET, the white noise of the voltage amplifier is 1.1 nV/root Hz at room temperature and 0.9 nV/root Hz when the FET is cooled to approximate to 120 K; the 1/f knee is below 100 Hz. The power dissipation of the FET, about 7 mW in our application, allows it to be used in a 4 K environment. With the same cooled FET, the charge amplifier has shown a noise of 120 e(-) rms with a total input capacitance of 45 pF.
引用
收藏
页码：778 / 788
页数：11
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