Structural and Electronic Properties of Silicon Carbide Nanotubes

被引：3

作者：

Behzad, Somayeh ^{[1
]}

Moradian, Rostam ^{[2
,3
,4
]}

Chegel, Raad ^{[5
]}

机构：

[1] Kermanshah Univ, Dept Nano Sci, Kermanshah, Iran

[2] Razi Univ, Fac Sci, Dept Phys, Kermanshah, Iran

[3] Razi Univ, Nano Sci & Technol Res Ctr, Kermanshah, Iran

[4] Inst Studies Theoret Phys & Math IPM, Dept Nano Sci, Computat Phys Sci Res Lab, Tehran, Iran

[5] Malayer Univ, Fac Sci, Dept Phys, Malayer, Iran

来源：

JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE | 2012年 / 9卷 / 11期

关键词：

Theoretical Calculations; Structural and Electronic Properties; Silicon Carbide Nanotubes; SIC NANOTUBES; CARBON NANOTUBES; AB-INITIO; NITRIDE NANOTUBES; NANOWIRES; NANORODS; BUNDLES; NICL2;

D O I：

10.1166/jctn.2012.2597

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Recently, silicon carbide nanotubes (SiCNTs), have attracted much attention because of their exceptional electronic, mechanical, thermal and transport properties. Here, we review the recent theoretical calculations of the structural and electronic properties of silicon carbide nanotubes. These calculations provide not only better understanding of the properties of these materials, but also predictions of their unusual properties. These calculations also may be utilized in electronic devices in the future.

引用

页码：1860 / 1869

页数：10

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